Formation of narrow grooves on thin metal layer by focused ion beam etching

Citation
M. Yoshida et al., Formation of narrow grooves on thin metal layer by focused ion beam etching, MICROEL ENG, 57-8, 2001, pp. 877-882
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
877 - 882
Database
ISI
SICI code
0167-9317(200109)57-8:<877:FONGOT>2.0.ZU;2-#
Abstract
Formation of narrow grooves in a thin metal layer was investigated which is a key in the proposed in situ focused ion beam (FIB) process to fabricate novel structures for observation of such phenomena as single electron tunne ling and giant magnetoresistance. Using a finely focused beam, narrower lin e patterns with narrower spacings were delineated on a Ge/nitrocellulose do uble layer resist. It is shown that the line spacing and length were limite d mainly by the process of peeling off of the Ge layer during the FIB etchi ng. (C) 2001 Elsevier Science B.V. All rights reserved.