Less than 0.1 mu m linewidth fabrication by visible light using super-resolution near-field structure

We have achieved less than 0.1 mum linewidth fabrication in a photoresist f ilm by using visible light together with a super-resolution near-field stru cture (Super-RENS). This technique enables to produce an optical aperture w ith subwavelength dimensions at a fixed distance to the photoresist film. I llumination of this aperture leads to a strong laterally confined optical n ear-field which exposes the photoresist. For this achievement, we have used polished SiO2 disk substrates, which have an atomically flat surface, in o rder to reduce edge roughness and also to improve our process. Additionally , optical properties of antimony films as one key material of super-RENS ha ve been estimated and laser heat effects influencing the formation mechanis m of the grooves in the photoresist film will be discussed in this paper. ( C) 2001 Elsevier Science B.V. All rights reserved.