Nanoscale patterning of self-assembled monolayers by e-beam lithography

The resolution of e-beam lithography in standard resists is limited by the size of the molecules in the resist. High resolution e-beam resists therefo re should not only show a specific sensitivity to electrons but also be thi n and composed of small subunits. Self-assembled monolayers; (SAMs) fulfil these criteria because they are homogeneous, highly ordered films of amphip hilic molecules with a typical thickness of 1-2 nm and an intermolecular sp acing of 1-0.5 nm. We demonstrate that gold nanostructures can be fabricate d using aliphatic and aromatic thiol self-assembled monolayers as positive and negative electron beam resists. (C) 2001 Elsevier Science B.V. All-righ ts reserved.