Vapour supply manifold for additive nanolithography with electron beam induced deposition

Citation
Hwp. Koops et al., Vapour supply manifold for additive nanolithography with electron beam induced deposition, MICROEL ENG, 57-8, 2001, pp. 909-913
Citations number
2
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
909 - 913
Database
ISI
SICI code
0167-9317(200109)57-8:<909:VSMFAN>2.0.ZU;2-P
Abstract
Three-dimensional additive nanolithography with electron beam induced depos ition (EBID) is very well suited for generating very fine structures at ver y high resolution for single electron tunnelling (SET) applications. Many a pplications involving material deposition, etching, and high resolution for two- and three-dimensional structuring of surfaces can benefit from a nove l lithography system having material supply in the form of vapours incorpor ated and inserted into the lithography system. Such a deposition lithograph y system is developed and applied to construct deposits from nanocrystallin e materials in a maskless structure generation process. (C) 2001 Published by Elsevier Science B.V.