On-line nanolithography using electron beam-induced deposition technique

A four-channel gas feeding was installed at a commercial e-beam lithography system. The gas system and the deposition technique were tested with a sol id precursor (CpPtMe3). With this material base we investigated the deposit ion behaviour on different substrates (Si, SiOx on Si), at different gas pr essures and different beam energies (E-0 = 2.5 and 15 keV). In all cases a minimum feature size of 30 mn was obtained. The growth of simple point stru ctures both in width and height shows a clear dependence on the pixeltime. The feature size can thus easily be controlled via the pixeltime of the e-b eam. In addition to fundamental research, we have produced nanowires and ot her arrangements by using this technique. All deposition structures were fo und to be accurately placed in a given wiring by using mix&match-technique. (C) 2001 Elsevier Science BY. All rights reserved.