Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques

Authors
Normand, P Kapetanakis, E Tsoukalas, D Tserepi, A Tsoi, E Beltsios, K Aidinis, K Zhang, S van den Berg, J
Citation
P. Normand et al., Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques, MICROEL ENG, 57-8, 2001, pp. 1003-1007
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
57-8
Year of publication
2001
Pages
1003 - 1007
Database
ISI
SICI code
0167-9317(200109)57-8:<1003:SMJDOB>2.0.ZU;2-F
Abstract
Multiple-tunnel junction devices with a source-drain electrode separation r anging from 50 to 200 nm and non-linear source-drain current-voltage charac teristics, are constructed by a combination of optical lithography, anisotr opic wet and dry etching and low-energy Si ion implantation. Electrical cha racteristics are found to depend strongly on the Si implantation dose and s ource-drain separation. (C) 2001 Elsevier Science B.V. All rights reserved.