Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications

Authors
Goswami, A Gupta, M Gupta, RS
Citation
A. Goswami et al., Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications, MICROW OPT, 31(2), 2001, pp. 97-105
Citations number
21
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
31
Issue
2
Year of publication
2001
Pages
97 - 105
Database
ISI
SICI code
0895-2477(20011020)31:2<97:AOSPAT>2.0.ZU;2-7
Abstract
A fringing field-effect-dependent MOSFET equivalent-circuit model for its m icrowave frequency applications has been developed. The thermal noise perfo rmance of the device has also been analyzed, including the distributed gate . The equivalent-current noise source takes into account the thermal noise generated by the resistive and inductive gate, and the results so obtained are compared with experimental / simulated data, and are in close agreement . (C) 2001 John Wiley & Sons, Inc.