In order to satisfy demands to study the electronic structure of quantum na
nostructures, a VUV beamline and a high-resolution and high-throughput phot
oemission end-station combined with a molecular beam epitaxy (MBE) system h
ave been constructed at the BL-IC of the Photon Factory. An angle-resolved
photoemission spectrometer, having high energy- and angular-resolutions; VG
Microtech ARUPS10, was installed. The total energy resolution of 31 meV at
the 60 eV of photon energy is achieved. For the automated angle-scanning p
hotoemission, the electron spectrometer mounted on a two-axis goniometer ca
n be rotated in vacuum by the computer-cont rolled stepping motors. Another
distinctive feature of this end-station is a connection to a MBE chamber i
n ultahigh vacuum (UHV). In this system, MBE-grown samples can be transferr
ed into the photoemission chamber without breaking UHV. Photoemission spect
ra of MBE-grown GaAs(001) surfaces were measured with high-resolution and b
ulk and surface components are clearly resolved. (C) 2001 Elsevier Science
B.V, All rights reserved.