Reaction kinetics of glissile interstitial clusters in a crystal containing voids and dislocations

It has been shown in recent years that one-dimensional (1D) atomic transpor t plays an important role in radiation damage accumulation in metallic mate rials under cascade irradiation conditions. This transport is due to cluste rs of self-interstitial atoms (SIAs) that form directly in cascades and mig rate along close-packed crystallographic directions. The reaction kinetics of 1D migrating clusters are known to be qualitatively different from those of three-dimensional diffusing point defects. It has been suggested that d eviation of the reaction kinetics of SIA clusters from those for pure 1D di ffusion is important for the further development of the theory of radiation damage. In the present paper, an analysis of the change in the reaction ki netics of SIA clusters with voids and dislocations due to spontaneous chang es of the cluster glide direction is presented. Two forms of spatial distri bution of voids, namely random and in the form of a lattice, are considered .