Ge self-diffusion in epitaxial Si1-xGex layers - art. no. 125901

Diffusion coefficients and activation energies have been determined for Ge diffusion in strain-relaxed Si1-xGex with x = 0.00, 0.10, 0.20, 0.30, 0.40, and 0.50. The activation energy drops from 4.7 eV in Si and Si0.90Ge0.10 t o 3.2 eV at x = 0.50. This value compares with the literature value for Ge self-diffusion in Ge, suggesting Ge-like diffusion already at x approximate to 0.5. The effect of strain on the diffusion was also studied showing a d ecrease in diffusion coefficient and an increase in activation energy upon going from, compressive over relaxed to tensile strain.