Characterization of layer stacks in microelectronic products: Challenges to sample preparation and TEM analysis

Citation
E. Zschech et al., Characterization of layer stacks in microelectronic products: Challenges to sample preparation and TEM analysis, PRAKT METAL, 38(8), 2001, pp. 442-453
Citations number
11
Categorie Soggetti
Metallurgy
Journal title
PRAKTISCHE METALLOGRAPHIE-PRACTICAL METALLOGRAPHY
ISSN journal
0032678X → ACNP
Volume
38
Issue
8
Year of publication
2001
Pages
442 - 453
Database
ISI
SICI code
0032-678X(200108)38:8<442:COLSIM>2.0.ZU;2-#
Abstract
Thin film and interface characterization are necessary in semiconductor ind ustry to ensure high yields and the required reliability of the products. P articularly, the analysis of layer stacks is a challenging task. Transmissi on electron microscopy (TEM) essentially contributes to layer stack analysi s in microelectronic products. Capabilities and limits of analytical TEM te chniques as well as advanced TEM sample preparation techniques are discusse d for front-end (MOS transistor) and back-end (interconnect) structures. Ty pical examples for advanced microprocessor devices are shown.