Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH

Citation
E. Van Veenendaal et al., Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH, SENS ACTU-A, 93(3), 2001, pp. 219-231
Citations number
16
Categorie Soggetti
Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS A-PHYSICAL
ISSN journal
09244247 → ACNP
Volume
93
Issue
3
Year of publication
2001
Pages
219 - 231
Database
ISI
SICI code
0924-4247(20011015)93:3<219:MOSCSS>2.0.ZU;2-M
Abstract
An optical microscopy study is presented of the micromorphology of silicon surfaces etched in KOH and TMAH, using large hemispherical specimen on whic h all possible surface orientations are present. Many of the features found on the silicon surfaces can be correlated with features of the etch rate a s a function of surface orientation. The topics that are treated include: t riangular and hexagonal shaped etch pits on Si{1 1 1}, spherical depression s and the occurrence of pyramidal protrusions on Si{1 0 0}, the occurrence of staircase or zigzag structures on Si{1 1 0} and the morphology of the tr ansition regions between these three main silicon surfaces. Nowhere on any of the etched silicon hemispheres microscopically smooth surfaces can be ob served. (C) 2001 Elsevier Science B.V. All rights reserved.