The monolithic integration of electronic circuits in standard CMOS technolo
gy with high aspect ratio micromechanical structures based on single-crysta
l silicon is presented. For this technology neither silicon on insulator (S
OI) wafers nor wet processes are required. A resonator device is chosen for
technology demonstration. The effect of micromachining on parameters of CM
OS transistors is detected and the usefulness of a final annealing step is
confirmed. A novel electronic circuit design allows signal processing, even
for low resonator signal levels and strong parasitic effects. (C) 2001 Els
evier Science B.V. All rights reserved.