Nanosized tin oxide sensitive layer on a silicon platform for domestic gasapplications

Citation
P. Fau et al., Nanosized tin oxide sensitive layer on a silicon platform for domestic gasapplications, SENS ACTU-B, 78(1-3), 2001, pp. 83-88
Citations number
13
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
78
Issue
1-3
Year of publication
2001
Pages
83 - 88
Database
ISI
SICI code
0925-4005(20010830)78:1-3<83:NTOSLO>2.0.ZU;2-R
Abstract
Micromachined silicon platforms have been specially created to be coated wi th a drop of tin oxide sensitive layer. Design of the silicon substrate inc ludes a thin dielectric membrane for mechanical and thermal insulation purp ose. A passivation layer covers the silicon front side structures except bo nding pads and sensitive layer contacts and allows an easy drop deposition (no short circuit risk with heater electrode). The deposition material is a suspension of tin dioxide nanoparticles mixed in a solvent. A novel drop d eposition technique is used and first characterizations under CO and CH4 ga ses are related and show high sensitivity and reliability level. (C) 2001 E lsevier Science B.V. All rights reserved.