Photoluminescence from(Si/SiO2)(n) superlattices and their use as emittersin [SiO2/Si](n) SiO2[Si/SiO2](m) microcavities

Si/SiO2 superlattices are recently under investigation to add optical funct ionality to silicon based microelectronics. In such superlattices quantum-c onfinement should drive Si to become a good light emitter. Emission propert ies can be further improved and controlled by placing the emitter in optica l microcavities. In this paper emission properties of (Si/SiO2)(n) superlat tices grown by Low Pressure Chemical Vapour Deposition will be compared wit h the ones obtained by other growth techniques and the origin of the emissi on will be discussed. Emission properties can be further improved and contr olled by placing the emitter in optical microcavities. Optical properties o f microcavities produced with standard complementary metal-oxide-semiconduc tor techniques containing Si/SiO2 superlattices as light emitter will be re viewed and a comparison between properties estimated from calculations and experiments will be given. (C) 2001 Published by Elsevier Science B.V.