Semiconductor intersubband laser/detector performance optimization using asimulated annealing algorithm

A numerical method for global optimization of semiconductor intersubband la ser/detector performance parameters is presented. The single-band effective -mass Schroedinger equation is solved by employing the argument Principle m ethod (APM) to extract both the bound (B) and quasibound (QB) eigen-energie s of the quantum heterostructure. APM is combined with a simulated annealin g (SA) algorithm to determine a set of device design parameters such as pot ential barrier height V-i, layer thickness d(i), applied bias V-Bias, for w hich the intersubband device performance is within a predetermined converge nce criterion. The method presented incorporates the energy-dependent effec tive mass of electrons in nonparabolic conduction bands. The performance of the method is evaluated for the design of an asymmetric Fabry-Perot electr on-wave interference filter (laser structure) and a dual-band quantum well infrared photodetector (QWIP). Results with and without nonparabolic effect s are presented. In addition, results from the present method are compared to results obtained via the optimization technique based on super-symmetric quantum mechanics (SUSYQM) for the case of an optically-pumped quantum cas cade (QC) laser. The present method is shown to improve the device performa nce beyond that obtained via SUSYQM optimization. Further, the present mode l can handle many optimization parameters and can incorporate fabrication c onstraints to achieve physically realizable devices. (C) 2001 Academic Pres s.