A unique ECR broad beam source for thin film processing

We present the special microwave excited ECR (electron cyclotron resonance) type broad beam ion source EC/A 125 together with first results in ion bea m deposition. Our source concept overcomes different disadvantages of commo n broad beam ion sources. By means of a modular source design and an autotu ning microwave power supply, an adaptation at different process requirement s is possible. The efficiency of the source is demonstrated analysing the p erformance in inert and reactive environment. We analyse and discuss the re sulting beam composition and draw important conclusions on the plasma-chemi cal processes occurring in the source from the measurement of the ion energ y distributions. The source is operated at the CYBERITE ion beam equipment and results in deposition of magneto-resistive films and multilayer films a re illustrated. (C) 2001 Elsevier Science B.V. All rights reserved.