The paper describes two methods which can be used to control the film struc
ture: (1) the energy delivered to the growing film, i.e. (i) substrate heat
ing and (ii) ion bombardment; and (2) the interlayer inserted between the s
ubstrate and the film. These methods were tested on Cu and Zr-Y-N films and
Cu and Cr-Ni-N films were used as interlayers. It was found that both meth
ods can improve the crystallinity of sputter deposited films. Dependences o
f the film structure on substrate temperature, T-s, negative substrate bias
, U-s, and substrate ion current density, i(s), are given. The effect of th
e interlayer on the structure of the deposited film is also clearly demonst
rated. (C) 2001 Elsevier Science B.V. All rights reserved.