Analysis of focused ion beam implantation of semiconductors by thermal microscopy

Implantation effects produced by focused ion beams in semiconductor materia ls have been analyzed with the help of thermal microscopy, based on thermal waves and laser-modulated optical reflectance (thermoreflectance). Implant ation profiles related to variations of the ion dose and to the halos of ne utrals and differently charged particles are interpreted with respect to th e local thermal and electronic transport properties. For the signal excitat ion, different schemes have been applied: modulated laser beam irradiation; and additional electrical AC heating, giving improved signal contrast and improved lateral resolution for imaging applications on semiconductor devic es. (C) 2001 Elsevier Science B.V. All rights reserved.