Production of low electron temperature ECR plasma for thin film deposition

Citation
N. Itagaki et al., Production of low electron temperature ECR plasma for thin film deposition, SURF COAT, 142, 2001, pp. 546-550
Citations number
10
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
142
Year of publication
2001
Pages
546 - 550
Database
ISI
SICI code
0257-8972(200107)142:<546:POLETE>2.0.ZU;2-F
Abstract
An electron cyclotron resonance (ECR) plasma with low electron temperature parallel to the magnetic field was produced by applying the mirror magnetic field for Ar, Ar/N-2 and H-2 gasses. It was found that the temperature par allel to the magnetic field was lower than the temperature perpendicular to the field by 5 similar to 50% and decreased at the 'throat' of the mirror magnetic field. Especially, the electron temperature parallel to the magnet ic field was observed to be less than 2 eV in the Ar/N-2 and the H-2 plasma . Our experimental results suggested that the high-quality thin films could be prepared by setting the substrate perpendicular to the field lines at t he 'throat' of mirror magnetic field because of the decrease in ion bombard ment to the substrate. (C) 2001 Elsevier Science B.V. All rights reserved.