Low-temperature PECVD-deposited silicon nitride thin films for sensor applications

Citation
G. Suchaneck et al., Low-temperature PECVD-deposited silicon nitride thin films for sensor applications, SURF COAT, 142, 2001, pp. 808-812
Citations number
32
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
142
Year of publication
2001
Pages
808 - 812
Database
ISI
SICI code
0257-8972(200107)142:<808:LPSNTF>2.0.ZU;2-N
Abstract
Polymer-like silicon-rich SiNx:H films suitable for transparent VIS/NIR/MIR -range optical coatings were deposited by PECVD at a substrate temperature of 80 and 150 degreesC. Optical properties and film microstructure were inv estigated by transmission/reflection measurements and by FTIR. Air exposure for more than 1 year reveals no post-oxidation with time. The application as an antireflective coating for IR-sensor arrays is demonstrated. (C) 2001 Elsevier Science BN. All rights reserved.