C. Taschner et al., Deposition of TiN, TiC and Ti1-xAlxN coatings by pulsed d.c. plasma enhanced chemical vapour deposition methods, SURF COAT, 142, 2001, pp. 823-828
Unipolar and bipolar pulsed d.c. plasma enhanced chemical vapour deposition
techniques have been used under various process conditions to deposit hard
crystalline (Ti,AI)N, TiC and TiN coatings on steel and WC/Co hard metal s
ubstrates at temperatures between 500 and 700 degreesC. As process gases mi
xtures of titanium tetrachloride (TiCl4), aluminium trichloride (AlCl3) and
nitrogen or methane/hydrogen/argon were applied. The golden, violet grey o
r dark grey coloured TiN, (TiAl)N, TiC coatings deposited by varying the su
bstrate temperature, plasma power density, excitation mode, and titanium to
aluminium ratio in the gas phase were investigated with respect to their c
omposition and structure. At substrate temperatures up to 700 degreesC and
gas mixture ratios of Ti/Al = 0.3-0.5 using the unipolar pulsed d.c. method
cubic (Ti,ADN coatings with different aluminium and titanium content could
be deposited. At constant gas phase ratios and plasma parameters an increa
sed substrate temperature resulted in an increased titanium content. For th
e bipolar d.c. excitation mode higher aluminium trichloride concentration h
ad to be used in order to obtain the same composition as for the unipolar c
ase. Besides the cubic (Ti,AI)N phase, hexagonal AIN was found in samples p
repared at 700 degreesC and 4 mbar by XRD measurements. The crystallite siz
e of the (Ti,AI)N coatings deposited by unipolar and bipolar activation wer
e estimated to be approximately 10 nm. The hardness HV[0.02] was found to b
e in the range of 25-30 GPa for Ti1-xAlxN, up to 32 GPa for TiN, and up to
40 GPa for TiC. Coating thickness and element composition were determined b
y glow discharge optical emission spectroscopy depth profile analysis. (C)
2001 Elsevier Science B.V. All rights reserved.