Room temperature synthesis of SiO2 thin films by ion beam induced and plasma enhanced CVD

Compact and dense thin films of SiO2 have been prepared at room temperature by ion beam induced CVD (IBICVD). By this procedure accelerated O-2(+) spe cies interact with the surface of the substrate provoking the decomposition of the Si(CH3)Cl precursor and the formation of the film. The films have b een characterized by AFM, FT-IR, RBS and TEM. Their refractive indexes have been determined by spectroscopic ellipsometry. Layers with higher roughnes s and porosity can be prepared by using plasma enhanced CVD of the same vol atile precursor with a microwave ECR plasma source. In this case the additi on of Ar to the plasma gas produces an increase in porosity. All the data c onfirm the previous microstructural characteristics of the films. (C) 2001 Elsevier Science B.V. All rights reserved.