Titanium boronitride (TiBN) films are deposited on steel and glass substrat
es by DC magnetron sputtering of a TiB2 target in various Ar-N-2 mixtures.
In this report the electrical properties of TiBN films are investigated in
connection with their structure. At low nitrogen flow rate, the films are n
anocrystallized in a TiB2-like structure. On the other hand at high nitroge
n flow rate, TiBN films contain nanocrystals of TiN probably embedded in a
boron nitride amorphous matrix. The electrical resistivity of TiBN films in
creases continuously with the nitrogen flow rate. The thermal behaviour of
the electrical resistance shows that coatings with a TiB2-like structure ha
ve a positive temperature coefficient of resistance, whereas samples obtain
ed under high nitrogen flow rate exhibit a negative one. These results are
discussed together with those obtained from high-resolution photoemission s
pectroscopy, which gives evidence to the metallic character for all deposit
s. (C) 2001 Elsevier Science B.V. All rights reserved.