Heat and mass transfer from a non-equilibrium low-pressure plasma of oxygen
to an oxide semiconductor (n- or p-type) target have been measured. The ai
m of this work is to establish a correlation between the electronic propert
ies of the semiconductors (electronic gap) and their reactivity (activation
energy of the recombination reaction). The energy transfer from a gas to a
material is defined by the recombination and accommodation coefficients, g
amma and beta, respectively. The gamma coefficient is measured in a pulsed
radio frequency plasma reactor (13.56 MHz) in non-equilibrium conditions us
ing an actinometric method. The test materials are n- and p-type semiconduc
tors having band gap energies varying from 0.3 to 7.3 eV. (C) 2001 Elsevier
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