GROWTH OF HIGH-QUALITY GAAS ALAS BRAGG MIRRORS ON PATTERNED INP-BASEDQUANTUM-WELL MESA STRUCTURES/

We have investigated the regrowth of GaAs/AlAs quarter-wave Bragg refl ectors on patterned mesa InP-based quantum well heterostructures that can be fabricated into 1.55 mu m vertical cavity surface emitting lase rs. It is seen from transmission electron and scanning electron micros copy that the multiple layer GaAs-based mirrors can be grown on InP-ba sed heterostructure mesas of diameters 10-40 mu m without noticeable p ropagation of defects into the reflector layers or the quantum well re gion below. At the same time the photoluminescence from the quantum we lls after regrowth indicates that lasers can be fabricated. (C) 1997 A merican Institute of Physics.