SILICON INCORPORATION INTO CHEMICAL-VAPOR-DEPOSITION DIAMOND - A ROLEOF OXYGEN

Authors
SAKAGUCHI I NISHITANIGAMO M LOH KP HANEDA H HISHITA S ANDO T
Citation
I. Sakaguchi et al., SILICON INCORPORATION INTO CHEMICAL-VAPOR-DEPOSITION DIAMOND - A ROLEOF OXYGEN, Applied physics letters, 71(5), 1997, pp. 629-631
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
5
Year of publication
1997
Pages
629 - 631
Database
ISI
SICI code
0003-6951(1997)71:5<629:SIICD->2.0.ZU;2-K
Abstract
The suppression effect of oxygen on Si incorporation in homoepitaxial diamond films grown by microwave assisted chemical vapor deposition is investigated by secondary ion mass spectrometry. The Si depth profile in the multilayered diamond films continuously synthesized with diffe rent oxygen addition shows that Si incorporation decreases with increa sing oxygen addition into the plasma. A change in the interfacial comp osition at the quartz glass due to oxygen-promoted surface chemistry m ay be the origin of this suppression effect. (C) 1997 American Institu te of Physics.