SI1-YCY SI(001) HETEROSTRUCTURES MADE BY SUBLIMATION OF SIC DURING SILICON MOLECULAR-BEAM EPITAXY/

Preparation of pseudomorphic Si1-yCy/Si(001) heterostructures using Si molecular beam epitaxy with C obtained from SiC sublimation in a high -temperature cell has been studied. Thick (approximate to 2000 Angstro m) homogenous Si1-yCy layers, y less than or equal to 1.5%, and Si1-yC y/Si multiple quantum well (MQW) structures, y less than or equal to 8 %, have been prepared. There is a growth temperature dependent surface roughness accumulating during the growth sequence that can lead to re duction of C induced strain. Temperature modulation during growth has been used to suppress this effect. Near band gap photoluminescence is reported from Si1-yCy/Si MQW structures. (C) 1997 American Institute o f Physics.