T. Bitzer et Nv. Richardson, DEMONSTRATION OF AN IMIDE COUPLING REACTION ON A SI(100)-2X1 SURFACE BY MOLECULAR LAYER DEPOSITION, Applied physics letters, 71(5), 1997, pp. 662-664
In this letter, we report the successful growth of an ultrathin organi
c film on Si(100)-2 X 1 by reactive coupling of polyimide precursors.
Using the molecular layer deposition technique 1,4-phenylene diamine a
nd promellitic dianhydride were sequentially dosed on clean Si(100)-2
X 1 under ultrahigh vacuum conditions. The interfacial imidization was
initiated by thermal curing at 200 degrees C. High resolution electro
n energy loss spectroscopy was employed to identify surface species. T
he spectra show clearly, than an oligimide chain has been formed which
stands upright on the substrate. The chain bonds to the silicon subst
rate via a Si-(NH)-C linkage. (C) 1997 American Institute of Physics.