DEMONSTRATION OF AN IMIDE COUPLING REACTION ON A SI(100)-2X1 SURFACE BY MOLECULAR LAYER DEPOSITION

Citation
T. Bitzer et Nv. Richardson, DEMONSTRATION OF AN IMIDE COUPLING REACTION ON A SI(100)-2X1 SURFACE BY MOLECULAR LAYER DEPOSITION, Applied physics letters, 71(5), 1997, pp. 662-664
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
5
Year of publication
1997
Pages
662 - 664
Database
ISI
SICI code
0003-6951(1997)71:5<662:DOAICR>2.0.ZU;2-U
Abstract
In this letter, we report the successful growth of an ultrathin organi c film on Si(100)-2 X 1 by reactive coupling of polyimide precursors. Using the molecular layer deposition technique 1,4-phenylene diamine a nd promellitic dianhydride were sequentially dosed on clean Si(100)-2 X 1 under ultrahigh vacuum conditions. The interfacial imidization was initiated by thermal curing at 200 degrees C. High resolution electro n energy loss spectroscopy was employed to identify surface species. T he spectra show clearly, than an oligimide chain has been formed which stands upright on the substrate. The chain bonds to the silicon subst rate via a Si-(NH)-C linkage. (C) 1997 American Institute of Physics.