MODEL OF COHERENT TRANSPORT IN METAL-INSULATOR MIDBAND GAP SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURE

Authors
ABRAMOV II DANILYUK AL
Citation
Ii. Abramov et Al. Danilyuk, MODEL OF COHERENT TRANSPORT IN METAL-INSULATOR MIDBAND GAP SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURE, Applied physics letters, 71(5), 1997, pp. 665-667
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
5
Year of publication
1997
Pages
665 - 667
Database
ISI
SICI code
0003-6951(1997)71:5<665:MOCTIM>2.0.ZU;2-T
Abstract
A kinetic model of coherent transport with self-organized carrier tran sfer via midband gap semiconductor states in metal-insulator-midband g ap semiconductor-insulator-semiconductor structure at room temperature is proposed. The coherent transport at room temperature can be a resu lt of continuous oscillations of charge carriers at midband gap semico nductor states. (C) 1997 American Institute of Physics.