SURFACE-RECONSTRUCTION-ENHANCED SOLUBILITY OF N, P, AS, AND SB IN III-V SEMICONDUCTORS

Authors
ZHANG SB ZUNGER A
Citation
Sb. Zhang et A. Zunger, SURFACE-RECONSTRUCTION-ENHANCED SOLUBILITY OF N, P, AS, AND SB IN III-V SEMICONDUCTORS, Applied physics letters, 71(5), 1997, pp. 677-679
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
5
Year of publication
1997
Pages
677 - 679
Database
ISI
SICI code
0003-6951(1997)71:5<677:SSONPA>2.0.ZU;2-4
Abstract
We show that surface reconstructions may play an essential role in det ermining the equilibrium solubilities of N, P, As, and Sb in various m -V compounds. In particular, anion-anion dimerization of the (001)-bet a 2(2 X 4) surface can enhance the solubility of N near the surface in GaAs, GaP, and InP by five, three, and two orders of magnitudes, resp ectively, at 1000 K. With certain assumptions on the growth kinetics, this high concentration of N may be frozen in as the crystal grows. (C ) 1997 American Institute of Physics.