BIAS-ENHANCED NUCLEATION OF DIAMOND ON SILICON DIOXIDE

Characterization of amorphous SiO2 surfaces after biasing pretreatment s, which induce nucleation of diamond, has been carried out using x-ra y photoelectron spectroscopy and Raman spectroscopy. A mixture of sili con carbide, silicon oxycarbide, and diamond are formed upon exposure of biased SiO2 surfaces to a CH4+H-2 plasma used for diamond depositio n. It is concluded that nucleation of diamond on amorphous SiO2 surfac es is promoted by formation of a SiC surface layer. Textured diamond f ilms have been fabricated ou bulk SiO2 substrates using biasing pretre atments to induce diamond nucleation. (C) 1997 American Institute of P hysics.