Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

Citation
Sj. Koester et al., Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy, APPL PHYS L, 79(14), 2001, pp. 2148-2150
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
14
Year of publication
2001
Pages
2148 - 2150
Database
ISI
SICI code
0003-6951(20011001)79:14<2148:EOTPOS>2.0.ZU;2-4
Abstract
The effect of thermal annealing on Si/SiGe heterostructures is studied usin g Raman spectroscopy. The structures consisted of Si on relaxed Si0.8Ge0.2 where the top Si thickness was 20-30 nm. Micro-Raman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100 degreesC for 30 s. However, the intensity of the Si peak was systematically reduced with i ncreasing thermal processing, a result which is attributed to interdiffusio n at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer. (C) 2001 American Institute of Physics.