Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

Authors
Saint-Girons, G Patriarche, G Largeau, L Coelho, J Mereuta, A Moison, JM Gerard, JM Sagnes, I
Citation
G. Saint-girons et al., Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots, APPL PHYS L, 79(14), 2001, pp. 2157-2159
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
14
Year of publication
2001
Pages
2157 - 2159
Database
ISI
SICI code
0003-6951(20011001)79:14<2157:BDOICI>2.0.ZU;2-W
Abstract
Low-pressure metalorganic-vapor-phase-epitaxy (LP-MOVPE) grown InGaAs/GaAs quantum dots (QDs) emitting around 1.3 mum have been studied by photolumine scence and transmission electron microscopy (TEM). We demonstrate the prese nce of a bimodal inhomogeneous broadening of the photoluminescence, correla ted with a bimodal QDs contrast distribution in the TEM micrographs. Increa sing the growth temperature of the dots induces a decrease of the ratio bet ween the number of In-poor and In-rich QDs, illustrating the crucial influe nce of indium desorption on the LP-MOVPE growth of InGaAs QDs. (C) 2001 Ame rican Institute of Physics.