We measure microwave frequency (4-40 GHz) photoresistance at low magnetic f
ield B, in high mobility two-dimensional electron gas samples, excited by s
ignals applied to a transmission line fabricated on the sample surface. Osc
illatory photoresistance vs B is observed. For excitation at the cyclotron
resonance frequency, we find a giant relative photoresistance DeltaR/R of u
p to 250%. The photoresistance is apparently proportional to the square roo
t of applied power, and disappears as the temperature is increased. (C) 200
1 American Institute of Physics.