Estimation of the dielectric properties of low-k materials using optical spectroscopy

Citation
K. Postava et al., Estimation of the dielectric properties of low-k materials using optical spectroscopy, APPL PHYS L, 79(14), 2001, pp. 2231-2233
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
14
Year of publication
2001
Pages
2231 - 2233
Database
ISI
SICI code
0003-6951(20011001)79:14<2231:EOTDPO>2.0.ZU;2-N
Abstract
The dielectric function spectra of low dielectric constant (low-k) material s have been determined using spectroscopic ellipsometry, near-normal incide nce spectroscopic reflectometry, and Fourier transform infrared transmissio n spectrometry over a wide spectral range from 0.03 to 5.4 eV (230 nm to 40 .5 mum wavelength region). The electronic and ionic contributions to the ov erall static dielectric constant were determined for representative materia ls used in the semiconductor industry for interlayer dielectrics: (1) FLARE -organic spin-on polymer, (2) HOSP-spin-on hybrid organic-siloxane polymer from the Honeywell Electronic Materials Company, and (3) SiLK-organic diele ctric resin from the Dow Chemical Company. The main contributions to the st atic dielectric constant of the low-k materials studied were found to be th e electronic and ionic absorptions. (C) 2001 American Institute of Physics.