First-principles study of InP and GaP(001) surfaces

Citation
O. Pulci et al., First-principles study of InP and GaP(001) surfaces, COMP MAT SC, 22(1-2), 2001, pp. 32-37
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
COMPUTATIONAL MATERIALS SCIENCE
ISSN journal
09270256 → ACNP
Volume
22
Issue
1-2
Year of publication
2001
Pages
32 - 37
Database
ISI
SICI code
0927-0256(200111)22:1-2<32:FSOIAG>2.0.ZU;2-Z
Abstract
The dependence of the GaP and InP(0 0 1) surface reconstructions on the che mical potentials of their constituents is explored. Based on first-principl es pseudopotential plane-wave calculations the surface phase diagram is obt ained. For both GaP(0 0 1) and Inp(0 0 1) surfaces, P-top dimer reconstruct ions are predicted for P-rich conditions, while for group III-element rich preparations a mixed dimer (III-P) on a complete III-layer is favoured. For GaP, in addition, a Ga-top dimer reconstruction seems to be a possibility for very Gallium rich growth conditions. STM images are calculated in order to contribute to a solution of the structural puzzle. (C) 2001 Published b y Elsevier Science B.V.