High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances

Authors
Chung, Y Cai, S Lee, W Lin, Y Wen, CP Wang, KL Itoh, T
Citation
Y. Chung et al., High power wideband AlGaN/GaN HEMT feedback amplifier module with drain and feedback loop inductances, ELECTR LETT, 37(19), 2001, pp. 1199-1200
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
19
Year of publication
2001
Pages
1199 - 1200
Database
ISI
SICI code
0013-5194(20010913)37:19<1199:HPWAHF>2.0.ZU;2-Y
Abstract
A high power wideband feedback amplifier module using AlGaN/ GaN high elect ron mobility transistor has been developed that covers the frequency range of DC to 5 GHz with small signal gain of 9 dB. Shunt feedback topology is i ntroduced by adding inductances to increase the bandwidth. At mid-band freq uency, power added efficiency of 20% and a saturation power level of 29.5 d Bm were obtained at a drain voltage of 12 V (V-ds) and a gate voltage of -3 V (V-gs).