Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure

Authors
Ishikawa, Y Ishihara, T Iwasaki, M Tabe, M
Citation
Y. Ishikawa et al., Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure, ELECTR LETT, 37(19), 2001, pp. 1200-1201
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
19
Year of publication
2001
Pages
1200 - 1201
Database
ISI
SICI code
0013-5194(20010913)37:19<1200:NDCDTR>2.0.ZU;2-P
Abstract
The resonant tunnelling effect was studied for Si/SiO2 double barrier struc tures fabricated from a bonded silicon-on-insulator wafer with an ultrathin buried SiO2 layer. As a result, in Si/SiO2 systems, we observed, for the f irst time, negative differential conductance due to resonant tunnelling of electrons.