A CMOS 400-Mb/s serial link for AS-memory systems using a PWM scheme

Citation
Wh. Chen et al., A CMOS 400-Mb/s serial link for AS-memory systems using a PWM scheme, IEEE J SOLI, 36(10), 2001, pp. 1498-1505
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
36
Issue
10
Year of publication
2001
Pages
1498 - 1505
Database
ISI
SICI code
0018-9200(200110)36:10<1498:AC4SLF>2.0.ZU;2-4
Abstract
In this paper, a serial link for AS-memory systems fabricated in a 0.25-mum standard CMOS technology is presented. This serial link utilizes a pulsewi dth modulation (PWM) technique. By transmitting the PWM-encoded signal with periodic rising edges, the clock can be implicitly embedded in the data st ream and the associating overhead needed in clock/data recovery circuits ca n be mitigated. The symbol rate is 200 Mb/s and the equivalent data rate is 400 Mb/s. The PWM transceiver dissipates 66.5 mW at a 2.5-V supply voltage . It is suitable for the AS-memory systems in which the pin count is limite d and elaborate clock/data recovery circuits are not required.