Simulation of pores sealing during homoepitaxy on Si(111) surface

Authors
Zverev, AV Neizvestny, IG Shwartz, NL Yanovitskaya, ZS
Citation
Av. Zverev et al., Simulation of pores sealing during homoepitaxy on Si(111) surface, IAN FIZ, 65(2), 2001, pp. 192-195
Citations number
10
Categorie Soggetti
Physics
Journal title
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
ISSN journal
03676765 → ACNP
Volume
65
Issue
2
Year of publication
2001
Pages
192 - 195
Database
ISI
SICI code
0367-6765(200102)65:2<192:SOPSDH>2.0.ZU;2-C