Formation of structural defects in silicon wafers implanted with high energy Er ions

Citation
Vi. Vdovin et al., Formation of structural defects in silicon wafers implanted with high energy Er ions, IAN FIZ, 65(2), 2001, pp. 280-284
Citations number
11
Categorie Soggetti
Physics
Journal title
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
ISSN journal
03676765 → ACNP
Volume
65
Issue
2
Year of publication
2001
Pages
280 - 284
Database
ISI
SICI code
0367-6765(200102)65:2<280:FOSDIS>2.0.ZU;2-X