Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation: A powerful technique

Citation
J. Muller et al., Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation: A powerful technique, J PHYS IV, 11(PR3), 2001, pp. 17-22
Citations number
19
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
11
Issue
PR3
Year of publication
2001
Pages
17 - 22
Database
ISI
SICI code
1155-4339(200108)11:PR3<17:IITMPO>2.0.ZU;2-#
Abstract
The gas-phase intermediates that resulted from the thermolysis of the singl e-source precursor Me2N(CH2)(3)Ga(N-3)(2) (6) have been investigated by mat rix isolation IR spectroscopy. The fragmentation of 6 occurs above 450 degr eesC resulting in equal amounts of HN3 and Ga(N-3). Gallium monoazide was c haracterized for the first time in argon matrices (v(as)(N-3) at 2106.0 cm( -1) and v(s)(N-3) at 1340.3 cm(-1)). Apart from the azides, the thermolysis products NH3, H2C=CNMe, and HCN resulted in the most intense IR absorption s. Based on the fact that allyldimethylamine was not found among the thermo lysis products and in comparison with the fragmentation of compounds of the type Me2N(CH2)(3)MX2 (1-4) a beta -hydrogen elimination can be excluded as the initial fragmentation step of 6.