(HFA)Cu center dot 1,5-COD as the prospective precursor for CVD-technologies: The electronic structure, thermodynamical properties and process of formation of thin copper films

The properties of (BFA)Cu .1,5-COD complex being the prospective CVD-precur sor for thin copper films for microelectronics, were investigated by UV (He 1) photoelectron, X-ray fluorescent spectroscopy and mass-spectroscopy tog ether with ab initio calculations in approximation of density functional th eory. The detailed analysis of energy and structure of highest occupied MO' s of (BFA)Cu .1,5-COD was carried out. The thermodynamical and kinetical pa rameters of thermolysis reaction for (BFA)Cu .1,5-COD were determined and d iscussed. The initial stages of growth of thin copper films on the basis of this precursor (Si3N4 substrates) were studied by high-resolution transmis sion electron microscopy and X-ray photoelectron spectroscopy.