Low pressure chemical vapor deposition of CuxS

CuxS thin films have been prepared on glass substrates by Low-Pressure Chem ical Vapor Deposition (LPCVD) in a hot wall reactor from copper(II) bis-tet ramethylheptanedionate (Cu(thd)(2)) hydrogen sulfide (H2S), and hydrogen, T he influence of the temperature, the H2S partial pressure, and the Cu(thd)( 2) partial pressure on the crystalline phase composition, the stoichiometry , and the morphology has been examined. It is found that the temperature de termines the crystalline phase of the films. Pure CuS thin films form up to 227 degreesC, whereas films with mixed phases of increased copper content form when the temperature increases up to 505 degreesC. The reaction kineti cs are investigated and discussed by analyzing the axial deposition profile of the deposited films. We propose a mechanism based on the competitive ad sorption and reaction of Cu(thd)(2), H2S, and 2H(thd). Downstream the react or the surface reaction between Cu(thd)2 and H2S is retarded by co-absorpti on of I-I(thd)(g) which leads to blocking of the active surface sites.