Perovskite heterostructures grown by MOCVD

3d-metal perovskites are promising thin film materials with a great variety of electrical and magnetic properties. We have deposited the epitaxial het erostructures including different combinations of CMR manganites (La1-xPrx) (0.7)Ca0.3MnO3, (x=0-1), metallic nickelates RNiO3 (R=Pr, Nd, Sm) with shar p metal-insulator transition and antiferromagnetic insulators RFeO3 (R=Nd, Eu). The heterostructures were characterised by XRD, SEM, EDX, HREM, RBS, e lectric and magnetic measurements. Particular attention is paid to the latt ice strain in the layers and the structure of their interfaces. The prototy pe electronic devices based on the heterostructures are discussed.