Properties of thin AIN films prepared by PECVD and rapid thermal processes

Authors
Beshkov, GD Georgiev, SS Grigorov, KG Maciel, HS Djouadi, A Marinov, M
Citation
Gd. Beshkov et al., Properties of thin AIN films prepared by PECVD and rapid thermal processes, J PHYS IV, 11(PR3), 2001, pp. 287-292
Citations number
13
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
11
Issue
PR3
Year of publication
2001
Pages
287 - 292
Database
ISI
SICI code
1155-4339(200108)11:PR3<287:POTAFP>2.0.ZU;2-V
Abstract
The paper deals with structural, morphological and electrical investigation s of thin AIN films prepared by NH3 plasma enhanced chemical vapor depositi on (PECVD). The results are compared with those when 600 mn thick Al films were rapid annealed (RTA) at 600 and 800 degreesC in NH3 atmosphere for a t ime interval of 15, 30, 60 and 180 see. Correlations between the properties of the layers, and the technological process and parameters were observed.