Growth of Ru and RuO2 films by metal-organic chemical vapour deposition

We have prepared RuO2 layers by metal organic chemical vapour deposition us ing liquid delivery source and by thermal evaporation of powder precursors. The films were prepared on silicon and r-plane cut sapphire substrates. We discuss thermodynamics of both types of MOCVD techniques. Liquid delivery source technique using diglyme solvent results in deposition of metallic Ru film with some traces of RuO2, while films prepared by thermal evaporation of powder precursors consist of pure RuO2 phase. Thermal evaporation MOCVD grown RuO2 films exhibit excellent electrical properties; room temperature resistivity of 30 mu Omega cm and residual resistivity ratio between 8 and 30.