Advances in copper CVD for the semiconductor industry

Authors
Citation
Jat. Norman, Advances in copper CVD for the semiconductor industry, J PHYS IV, 11(PR3), 2001, pp. 497-503
Citations number
44
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
11
Issue
PR3
Year of publication
2001
Pages
497 - 503
Database
ISI
SICI code
1155-4339(200108)11:PR3<497:AICCFT>2.0.ZU;2-L
Abstract
The evolution of copper CVD is reviewed from the early efforts in metal CVD to the copper precursors and CVD processes currently under development for copper metallization in the semiconductor industry where copper is rapidly supplanting aluminum as the high speed interconnect metal of choice. Proce ssing techniques for achieving adhesion of CVD copper to diffusion barrier materials are discussed and precursors for atomic layer deposition (ALD) of copper are described. In addition, unique abatement technologies for coppe r CVD are outlined that minimize the release of volatile copper species int o the environment and enable the recycle of CVD by-products back to fresh c opper precursor.