The evolution of copper CVD is reviewed from the early efforts in metal CVD
to the copper precursors and CVD processes currently under development for
copper metallization in the semiconductor industry where copper is rapidly
supplanting aluminum as the high speed interconnect metal of choice. Proce
ssing techniques for achieving adhesion of CVD copper to diffusion barrier
materials are discussed and precursors for atomic layer deposition (ALD) of
copper are described. In addition, unique abatement technologies for coppe
r CVD are outlined that minimize the release of volatile copper species int
o the environment and enable the recycle of CVD by-products back to fresh c
opper precursor.