MOCVD of rhenium-containing complex oxides with the new thd-precursor

Complex oxides containing rhenium, for instance, magnetoresistive double pe rovskites and Re-stabilised Hg high T-c superconductors, attract a signific ant attention. We developed a volatile rhenium compound compatible with the thd-complexes of metals by reaction of the product of the, metal electroly sis with 2,2,6,6-tetramethylheptan-3,5-dion at the elevated temperature. Th e details of crystal structure of the compound are discussed. The blocks [R eO(thd)(2)](ReO4) form layered molecular structure. The compound was used i n the single source MOCVD together with thd-complexes of different metals ( Ba, La, Ho) producing films of the double oxides. The Restabilised Re-x(Ba, Sr)(2)Ca2Cu3Oy (x=0.1-0.3) precursor films with high composition homogeneit y and surface smoothness were deposited to be saturated with Hg under the h igh pressure.